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EN27LN2G08 fiches techniques PDF

EON - 3.3V NAND Flash Memory

Numéro de référence EN27LN2G08
Description 3.3V NAND Flash Memory
Fabricant EON 
Logo EON 





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EN27LN2G08 fiche technique
EN27LN2G08_Preliminary
EN27LN2G08
2 Gigabit (256M x 8), 3.3 V NAND Flash Memory
Features
Voltage Supply: 2.7V ~ 3.6V
Organization
- Memory Cell Array :
(256M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64) bytes
- Block Erase : (128K + 4K) bytes
Page Read Operation
- Page Size : (2K + 64) bytes
- Random Read : 25µs (Max.)
- Serial Access : 25ns (Min.)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time
- Page Program Time : 250µs (Typ.)
- Block Erase Time : 2ms (Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power
Transitions
Reliable CMOS Floating-Gate Technology
- ECC Requirement: 4 bit/512 Byte
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
Command Register Operation
Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
NOP: 4 cycles
Cache Program Operation for High Performance
Program
Cache Read Operation
Copy-Back Operation
- EDO mode
- OTP Operation
- Two-Plane Operation
Ordering Information
Product ID
EN27LN2G08-25TCP
EN27LN2G08-25TIP
EN27LN2G08-25CECP
EN27LN2G08-25CEIP
Speed
25ns
25ns
25ns
25ns
Package
48-pin TSOP
48-pin TSOP
63 ball FBGA
63 ball FBGA
Comments
Pb-free
Pb-free
Pb-free
Pb-free
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2011 Eon Silicon Solution, Inc., www.eonssi.com
Rev. Preliminary 0.1, Issue Date: 2012/11/26

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