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PDF FSBF5CH60B Data sheet ( Hoja de datos )
| Número de pieza | FSBF5CH60B | |
| Descripción | Motion SPM 3 Module | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FSBF5CH60B
Motion SPM® 3 Series
January 2014
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 5 A 3-Phase IGBT Inverter with Integral Gate
Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim-
plify PCB Layout
• Separate Open-Emitter Pins from Low-Side IGBTs for
Three-Phase Current Sensing
• Single-Grounded Power Supply
• Isolation Rating: 2500 Vrms / min.
General Description
FSBF5CH60B is an advanced Motion SPM® 3 module
providing a fully-featured, high-performance inverter out-
put stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while also
providing multiple on-module protection features includ-
ing under-voltage lockouts, over-current shutdown, and
fault reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the incoming
logic-level gate inputs to the high-voltage, high-current
drive signals required to properly drive the module's
internal IGBTs. Separate negative IGBT terminals are
available for each phase to support the widest variety of
control algorithms.
Applications
• Motion Control - Home Appliance / Industrial Motor
Related Resources
• AN-9044 - Motion SPM® 3 Series Users Guide
Figure 1. Package Overview
Package Marking and Ordering Information
Device
FSBF5CH60B
Device Marking
FSBF5CH60B
Package
SPMJA-027
Packing Type
Rail
Quantity
10
©2007 Fairchild Semiconductor Corporation
FSBF5CH60B Rev. C3
1
www.fairchildsemi.com
1 page  
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Rating Unit
VPN
VPN(Surge)
VCES
± IC
± ICP
Supply Voltage
Supply Voltage (Surge)
Collector - Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
PC Collector Dissipation
TJ Operating Junction Temperature
Applied between P - NU, NV, NW
Applied between P - NU, NV, NW
TC = 25°C, TJ 150°C
TC = 25°C, TJ 150°C, Under 1 ms Pulse
Width
TC = 25°C per Chip
(2nd Note 1)
450
500
600
5
10
19
- 40 ~ 150
V
V
V
A
A
W
°C
2nd Notes:
1. The maximum junction temperature rating of the power chips integrated within the Motion SPM® 3 product is 150C (at TC 125C).
Control Part
Symbol
Parameter
Conditions
Rating Unit
VCC Control Supply Voltage
VBS High-Side Control Bias Voltage
VIN Input Signal Voltage
VFO Fault Output Supply Voltage
IFO Fault Output Current
VSC Current-Sensing Input Voltage
Applied between VCC(H), VCC(L) - COM
Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM
Applied between VFO - COM
Sink Current at VFO pin
Applied between CSC - COM
20
20
-0.3 ~ VCC + 0.3
-0.3 ~ VCC + 0.3
5
-0.3 ~ VCC + 0.3
V
V
V
V
mA
V
Bootstrap Diode Part
Symbol
Parameter
VRRM
IF
IFP
Maximum Repetitive Reverse Voltage
Forward Current
Forward Current (Peak)
TJ Operating Junction Temperature
Conditions
TC = 25°C, TJ 150°C
TC = 25°C, TJ 150°C
Width
Under 1 ms Pulse
Rating
600
0.5
2.0
-40 ~ 150
Unit
V
A
A
°C
Total System
Symbol
Parameter
VPN(PROT) Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
TC
TSTG
VISO
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Conditions
VCC = VBS = 13.5 ~ 16.5 V
TJ = 150°C, Non-Repetitive, < 2 s
-40CTJ 150C, See Figure 2
60 Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate
Rating
400
-40 ~ 125
-40 ~ 125
2500
Unit
V
°C
°C
Vrms
Thermal Resistance
Symbol
Parameter
Conditions
Rth(j-c)Q
Rth(j-c)F
Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module)
Inverter FWDi Part (per 1 / 6 module)
2nd Notes:
2. For the measurement point of case temperature (TC), please refer to Figure 2.
Min.
-
-
Typ.
-
-
Max.
6.3
6.5
Unit
°C / W
°C / W
©2007 Fairchild Semiconductor Corporation
FSBF5CH60B Rev. C3
5
www.fairchildsemi.com
5 Page 
Lower Arms
Control Input
Protection
Circuit State
Internal IGBT
Gate - Emitter Voltage
c6 c7
SET RESET
c4
c3
c2
SC
Output Current
c1
c8
Sensing Voltage
of Shunt Resistance
Fault Output Signal
SC Reference Voltage
CR Circuit Time
c5 Constant Delay
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short-circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: the pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “LOW”: IGBT OFF state.
c7 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON.
c8 : IGBT OFF state.
Figure 10. Short-Circuit Protection (Low-Side Operation Only)
©2007 Fairchild Semiconductor Corporation
FSBF5CH60B Rev. C3
11
www.fairchildsemi.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet FSBF5CH60B.PDF ] | |
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