DataSheetWiki


XS4202 fiches techniques PDF

Thinki Semiconductor - 200Volt Insulated Fast Recovery Diode

Numéro de référence XS4202
Description 200Volt Insulated Fast Recovery Diode
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





1 Page

No Preview Available !





XS4202 fiche technique
XS4202
®
XS4202
Pb Free Plating Product
Pb
20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine
APPLICATION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
PRODUCT FEATURE
· Ultrafast Recovery Time
· Soft Recovery Characteristics
· Low Recovery Loss
· Low Forward Voltage
· High Surge Current Capability
· Low Leakage Current
TO-3PF/TO-3PML
Internal Configuration
Base Backside
Anode
Cathode
Anode
GENERAL DESCRIPTION
XS4202 using the lastest FRED FAB process with ultrafast and soft recovery characteristic for welding machine.
ABSOLUTE MAXIMUM RATINGS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
VR
VRRM
IF(AV)
IF(RMS)
IFSM
PD
TJ
TSTG
Torque
Maximum D.C. Reverse Voltage
Maximum Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Module-to-Sink
TC=110°C, Per Diode
TC=110°C, Per Package
TC=110°C, Per Diode
TJ=45°C,t=10ms, 50Hz, Sine
RecommendedM3
210
10
20
14
100
83
-55 to +150
-55 to +150
1.1
Rth(J-C)
Weight
Junction-to-Case Thermal Resistance, Per Diode
1.5
5.2
Unit
V
A
W
°C
°C
N•m
°C /W
g
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IRM Maximum Reverse Leakage Current
VR =220V
VR =220V, TJ = 125°C
10 μA
10 mA
VF Forward Voltage
IF=10A
IF=10A,TJ=125°C
trr Reverse Recovery Time (IF = 1A, diF/dt = -200A/μs, VR = 30V)
0.9 1.1 V
0.8 0.95
17 ns
trr Reverse Recovery Time
IF =10A,VR =100V,
32 ns
IRRM Maximum Reverse Recovery Current
diF/dt = -200A/μs
2.1 A
trr Reverse Recovery Time
IF = 10A,VR =100V,
45 ns
IRRM Maximum Reverse Recovery Current
diF/dt = -200A/μs ,TJ=125°C
5
A
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/3
http://www.thinkisemi.com/

PagesPages 3
Télécharger [ XS4202 ]


Fiche technique recommandé

No Description détaillée Fabricant
XS4202 200Volt Insulated Fast Recovery Diode Thinki Semiconductor
Thinki Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche