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SAMYANG ELECTRONICS - ULTRA FAST RECTIFIER

Numéro de référence US3DB
Description ULTRA FAST RECTIFIER
Fabricant SAMYANG ELECTRONICS 
Logo SAMYANG ELECTRONICS 





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US3DB fiche technique
SAMYANG ELECTRONICS
US3AB---US3MB
SAM YANG
ULTRA FAST RECTIFIER
1111REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 3.0 A
FEATURES
Plastic package has Underwriters Laboratories
vvvvvFlam mability Classification 94V-0
For surface mount applications
Glass passivated chip junctions
Low profile package
Easy pick and place
Ultrafast recovery times for high efficiency
Low forward voltage,low power loss
Built-in strain relief,ideal for autom ated placem ent
High temperature soldering:
111 250oC/10 seconds on terminals
MECHANICAL DATA
Case:JEDEC DO-214AB,molded plastic body over
111 passivated chip
Term inals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
DO-214AB(SMB)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient tem perature unless otherwise specified
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current at
TL=110OC
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
VRRM
VRWS
VDC
IF(AV)
IFSM
US3AB US3BB US3DB US3GB US3JB US3KB US3MB
UNITS
US3AB US3BB US3DB US3GB US3JB US3KB US3MB
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
3.0 A
100.0
A
Maximum instantaneous forw ard voltage at 3A
VF
1.0
1.7 V
Maximum DC reverse current @TA=25oC
at rated DC blockjing voltage
@TA=100oC
Maximum reverse recovery time at IF=0.5A
IR=1.0A Irr=0.25A
Typical junction capacitance at 4.0V,1MHZ
IR
trr
CJ
10.0
50.0
50
70
μA
75 ns
50 pF
Maximum thermal resistance (NOTE1)
RθJA
25 oC/W
Operating temperature range
TJ
Storage temperature range
TSTG
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm)copper pad area
-55--------+150
-55--------+150
oC
oC
www.diode.co.kr
1.

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