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PDF DMT8012LSS Data sheet ( Hoja de datos )
| Número de pieza | DMT8012LSS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
80V
RDS(ON) Max
16.5mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
ID Max
TA = +25°C
9.7A
8.8A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) – Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON), yet maintain superior switching
performance. This device is ideal for use in:
Notebook Battery Power Management
Loadswitches
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
S
D
D
SD
S DG
Top View
GD
Top View
Internal Schematic
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT8012LSS-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
85
T8012LS
YY WW
= Manufacturer’s Marking
T8012LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
14
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated
1 page  
DMT8012LSS
1
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
0.00001
0.0001
RθJA(t)
RθJA =
9=5r℃(t)/W* RθJA
Duty Cycle, D = t1 / t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
5 of 7
www.diodes.com
May 2016
© Diodes Incorporated
5 Page | ||
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