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Numéro de référence | SC8612 | ||
Description | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop | ||
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1 Page
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Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SC8612
Preliminary
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Typ
4.2 @ VGS=4.5V
4.3 @ VGS=4.0V
20V 27A 4.4 @ VGS=3.8V
4.9 @ VGS=3.1V
5.6 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP TOP VIEW
BOTTOM VIEW
1.77
4x 0.25 㫧 0.03
43
52
61
Mark area 1-pin index mark S1
3
2x φ 0.25 㫧 0.03
2
1
0.16 㫧㩷0.01
4
5
6
0.25
0.5
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
20
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±8
27
100
PT Total Power Dissipation a
2.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
Details are subject to change without notice.
1
LAND PATTERN (REFERENCE)
2X
0.25
8X
R0.125
PIN 2
Unit : mm
PIN 5
PIN 1,3
PIN 4,6
PIN 1 : Source 1
PIN 2 : Gate 1
PIN 3 : Source 1
PIN 4 : Source 2
PIN 5: Gate 2
PIN 6 : Source 2
Jul,07,2015
www.samhop.com.tw
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Pages | Pages 5 | ||
Télécharger | [ SC8612 ] |
No | Description détaillée | Fabricant |
SC8611 | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
SC8612 | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
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