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Numéro de référence | SC8252B | ||
Description | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | SamHop | ||
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1 Page
SC8252BGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
45.0 @ VGS=4.5V
48.0 @ VGS=4.0V
24V 6A
57.0 @ VGS=3.1V
70.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.33 㫧 0.03
8252B
Date Code
BOTTOM VIEW
0.65
G2 S2
G1 S1
0.65
1-pin index mark S1
Mark area
0.210 㫧 0.010
0.107 㫧 0.007
4 - φ 0.31
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
24
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±12
6
60
PT Total Power Dissipation a
1.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
FET1
Gate 1
FET2
Gate 2
Gate
Protect
Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Sep,04,2015
www.samhop.com.tw
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Pages | Pages 8 | ||
Télécharger | [ SC8252B ] |
No | Description détaillée | Fabricant |
SC8252 | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
SC8252B | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
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