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SC8252B fiches techniques PDF

SamHop - Dual N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence SC8252B
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricant SamHop 
Logo SamHop 





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SC8252B fiche technique
SC8252BGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
45.0 @ VGS=4.5V
48.0 @ VGS=4.0V
24V 6A
57.0 @ VGS=3.1V
70.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.33 0.03
8252B
Date Code
BOTTOM VIEW
0.65
G2 S2
G1 S1
0.65
1-pin index mark S1
Mark area
0.210 0.010
0.107 0.007
4 - φ 0.31
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
24
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±12
6
60
PT Total Power Dissipation a
1.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
FET1
Gate 1
FET2
Gate 2
Gate
Protect
Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Sep,04,2015
www.samhop.com.tw

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