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BeRex - 30-4000 MHz SILICON GERMANIUM Gain Block

Numéro de référence BGS3
Description 30-4000 MHz SILICON GERMANIUM Gain Block
Fabricant BeRex 
Logo BeRex 





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BGS3 fiche technique
BGS3
30-4000 MHz SILICON GERMANIUM Gain Block
Device Features
Single Fixed 3V supply
No Dropping Resistor Required
No matching circuit needed
Lead-free/Green/RoHS compliant SOT-363 package
Application: Driver Amplifier, Cellular, PCS, GSM,
UMTS, WCDMA, Wireless Data
Part Marking (X: Wafer number)
BS3XOUT GND
GND
GND
GND
IN
Pin Description
RF IN
3
RF OUT
6
GND 1,2,4,5
Product Description
BeRex’s BGS3 is a high SiGe HBT MMIC am-
plifier, internally matched to 50 Ohms with-
out the need for external components. De-
signed to run directly from a 3V supply. The
BGS3 is designed for high linearity 3V gain
block applications . It is packaged in a RoHS-
compliant with SOT-363 surface mount
package.
Applications
Driver Amplifier
Cellular, PCS, GSM, UMTS, WCDMA
Typical Performance1
Parameter
Frequency
Unit
70 900 1900 2450 3500 MHz
Gain
S11
S22
OIP32
P1dB
Noise Figure
28
-17
-14
30.5
16.7
1.8
25.4
-17
-14
30.5
17.4
1.7
21.6 20 17.2 dB
-17 -20 -14.5 dB
-14 -16 -18.9 dB
30.5 28.5 27.2 dBm
16.9 16 14.5 dBm
1.8 1.9 2 dB
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.
Applications Circuit
Freq.
C1/C2
L1
(1608 Chip Ind.)
Application Circuit Values Example
50~900MHz 900MHz ~ 3GHz
2nF 100pF
820nH
56nH
3GHz ~ 4GHz
10pF
12nH
C3 C4 C5
+3V
Bandwidth
IC @ (Vc = 3V)
VC
dG/dT
RTH
Min. Typical Max. Unit
50
4000
MHz
48 55 62 mA
3.0 V
-0.006
dB/°C
130 °C/W
RFin
C1
L1
BGS3
Absolute Maximum Ratings
Parameter
C2 RFout Operating Case Temperature
Storage Temperature
Junction Temperature
Rating
-40 to +85
-55 to +155
150
Unit
°C
°C
°C
*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH
**less than 56nH improves RF performance at over 0.9GHz.
*820nH or higher value L1 improves RF performance at under
*Optimum value of L1 may vary with board design.
Operating Voltage
+3.3 V
Supply Current
110 mA
Input RF Power
12 dBm
Operation of this device above any of these parameters may result in permanent damage.
*C1,C2=2000pF, L1=820nH for 50MHz application.
*C1,C2=10pF, L1=12nH for 3.5GHz application.
BeRex
●website: www.berex.com
1
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2015 BeRex
Rev. E

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