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PDF CEM9939 Data sheet ( Hoja de datos )
| Número de pieza | CEM9939 | |
| Descripción | Dual Enhancement Mode Field Effect Transistor(N and P Channel) | |
| Fabricantes | Chino-Excel Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CEM9939 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CEM9939
N-Channel
1.2
1.1
VDS=VGS
ID=250 A
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
1.15
1.10 ID=250 A
1.05
1.00
0.95
0.90
0.85
-25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage
Variationwith Temperature
5
13.0
11.0
9.0
7.0
5.0
VDS=15V
2.5
0
0 24 6
8 10
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Temperature
20.0
10.0
5.0
1.0
0 0.3 0.6 0.9 1.2 1.5
VDS, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward
VoltageVariation with
Source Current
5-171
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet CEM9939.PDF ] | |
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