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PDF IXYX200N65B3 Data sheet ( Hoja de datos )
| Número de pieza | IXYX200N65B3 | |
| Descripción | IGBT | |
| Fabricantes | IXYS | |
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Advance Technical Information
XPTTM 650V IGBT
GenX3TM
Extreme Light Punch Through
IGBT for 10-30kHz Switching
IXYK200N65B3
IXYX200N65B3
VCES =
IC110 =
VCE(sat)
tfi(typ) =
650V
200A
1.70V
157ns
TO-264 (IXYK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC110
ICM
IA
EAS
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGE = 1M
Continuous
Transient
650 V
650 V
±20 V
±30 V
TC = 25°C (Chip Capability)
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms
TC = 25°C
TC = 25°C
VGE = 15V, TVJ = 150°C, RG = 0
Clamped Inductive Load
VGE = 15V, VCE = 400V, TJ = 150°C
RG = 10, Non Repetitive
TC = 25°C
410
160
200
1100
100
1
ICM = 200
@VCE VCES
8
1560
-55 ... +175
175
-55 ... +175
A
A
A
A
A
J
A
μs
W
°C
°C
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
300
260
1.13/10
20..120 /4.5..27
°C
°C
Nm/lb.in
N/lb
TO-264
PLUS247
10 g
6g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 250μA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 150°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
TJ = 150°C
Characteristic Values
Min. Typ. Max.
650 V
3.5 6.0 V
25 μA
2 mA
±100 nA
1.40
1.56
1.70 V
V
G
C
E
PLUS247 (IXYX)
Tab
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
International Standard Packages
Optimized for 10-30kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2015 IXYS CORPORATION, All Rights Reserved
DS100697(12/15)
1 page  
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
11
Eoff Eon - - - -
TJ = 150ºC , VGE = 15V
9 VCE = 400V
I C = 100A
7
11
9
7
55
3
I C = 50A
3
1
0 5 10 15 20 25
RG - Ohms
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
8
Eoff Eon - - - -
7 RG = 0Ω , VGE = 15V
VCE = 400V
6
IC = 100A
1
30
8
7
6
55
44
3
I C = 50A
3
22
11
25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Collector Current
380 580
t f i td(off) - - - -
340
RG = 0Ω , VGE = 15V
540
VCE = 400V
300 500
260
TJ = 150ºC
460
220 420
180 380
140
TJ = 25ºC
340
100 300
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYK200N65B3
IXYX200N65B3
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
6
Eoff Eon - - - -
5 RG = 0Ω , VGE = 15V
VCE = 400V
4
TJ = 150ºC
7
6
5
3
TJ = 25ºC
4
23
12
0
50 55 60 65 70 75 80 85 90 95
IC - Amperes
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
420
380 t f i
td(off) - - - -
TJ = 150ºC, VGE = 15V
340 VCE = 400V
1
100
1600
1400
1200
300
I C = 50A
260
220
I C = 100A
1000
800
600
180 400
140
0
200
5 10 15 20 25 30
RG - Ohms
Fig. 18. Inductive Turn-off Switching Times vs.
Junction Temperature
340 580
t f i td(off) - - - -
300 RG = 0Ω , VGE = 15V
VCE = 400V
260
I C = 50A
220
540
500
460
180
I C = 100A
140
420
380
100
25
50 75 100 125
TJ - Degrees Centigrade
340
150
© 2015 IXYS CORPORATION, All Rights Reserved
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