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Numéro de référence | NTE59 | ||
Description | Silicon Complementary Transistors | ||
Fabricant | NTE | ||
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1 Page
NTE58 (NPN) & NTE59 (PNP)
Silicon Complementary Transistors
High Power Audio Output
Features:
D High Power Dissipation
D Wide Safe Operating Area
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Device Dissipation (TFL = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA
Maximum Collector Cutoff Current
ICBO VCB = 200V, IE = 0
Maximum Emitter Cutoff Current
DC Forward Current Transfer Ratio
Collector–Emitter Saturation Voltage
Second Breakdown Collector Current
IEBO
hFE
VCE(sat)
IS/b
VEB = 6V, IC = 0
VCE = 4V, IC = 8A
IC = 10A, IB = 1A
VCE = 100V, t = 1sec
Cutoff Frequency
fT VCE = 12V, IE = 1A
Min Typ Max Unit
200 – – V
– – 0.1 mA
– – 0.1 mA
20 –
–
– – 2.5 V
1––A
– 20 – MHz
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Pages | Pages 2 | ||
Télécharger | [ NTE59 ] |
No | Description détaillée | Fabricant |
NTE50 | Silicon Complementary Transistors | NTE |
NTE5000A | Zener Diode / 1/2 Watt 5% Tolerance | NTE |
NTE5001A | (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance | NTE |
NTE5002A | (NTE5000A - NTE5060A) Zener Diode / 1/2 Watt 5% Tolerance | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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