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Numéro de référence | NTE324 | ||
Description | Silicon Complementary Transistors | ||
Fabricant | NTE | ||
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NTE323 (PNP) & NTE324 (NPN)
Silicon Complementary Transistors
General Purpose
Description:
The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a
TO39 type package designed for use as drivers for high power transistors in general purpose amplifier
and switching circuits.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation, Ptot
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining Voltage
Collector–Emitter Saturation Voltage
ICBO
ICEO
ICEV
IEBO
VCEO(sus)
VCE(sat)
VCB = 120V, IE = 0
VCE = 80V, IB = 0
VCE = 120V, VBE = –1.5V
VCE = 120V, VBE = –1.5V, TC = +150°C
VEB = 4V, IC = 0
IC = 10mA, IB = 0, Note 1
IC = 250mA, IB = 25mA, Note 1
IC = 500mA, IB = 50mA, Note 1
IC = 1A, IB = 200mA, Note 1
Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%.
Min Typ Max Unit
– – 1 µA
– – 10 µA
– – 1 µA
– – 1 mA
– – 1 µA
120 – – V
– – 0.6 V
– – 1.0 V
– – 2.0 V
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Pages | Pages 2 | ||
Télécharger | [ NTE324 ] |
No | Description détaillée | Fabricant |
NTE32 | Silicon Complementary Transistors | NTE |
NTE320 | Silicon NPN RF Power Transistor 40W @ 175MHz | NTE |
NTE320F | Silicon NPN RF Power Transistor 40W @ 175MHz | NTE |
NTE322 | Silicon NPN Transistor RF Power Output | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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