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Numéro de référence | NTE273 | ||
Description | Silicon Darlington Complementary | ||
Fabricant | NTE | ||
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NTE272 (NPN) & NTE273 (PNP)
Silicon Darlington Complementary
Power Amplifiers
Description:
The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type
case designed for use in complementary amplifiers and driver applications.
Features:
D High DC Current Gain:
hFE = 25,000 (Min) @ IC = 200mA
= 15,000 (Min) @ IC = 500mA
D Collector–Emitter Breakdown Voltage:
V(BR)CES = 40V @ IC = 500mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 1.5V @ IC = 1A
D Monolithic Construction for High Reliability
Absolute Maximum Ratings:
Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. NTE273 is a discontinued device and no longer available.
Note 2. Due to the monolithic construction of this device, breakdown voltages of both transistor ele-
ments are identical. V(BR)CES is tested in lieu of V(BR)CEO in order to avoid errors caused
by noise pickup. The voltage measured during the V(BR)CES test is the V(BR)CEO of the output
transistor.
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Pages | Pages 2 | ||
Télécharger | [ NTE273 ] |
No | Description détaillée | Fabricant |
NTE27 | Germanium PNP Transistor High Current / High Gain Amp | NTE |
NTE270 | Silicon Complementary Transistors Darlington Power Amp / Switch | NTE |
NTE2708 | Integrated Circuit NMOS / 8K UV EPROM / 450ns | NTE |
NTE271 | Silicon Complementary Transistors | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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