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Numéro de référence | NTE244 | ||
Description | Silicon Complementary Transistors | ||
Fabricant | NTE | ||
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NTE243 (NPN) & NTE244 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 80V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 4A
= 3V Max @ IC = 8A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.571W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter SustainingVoltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 100mA, IB = 0, Note 1
ICEO VCE = 40V, IE = 0
ICEX VCE = 80V, VBE(off) = 1.5V
VCE = 80V, VBE(off) = 1.5V, TA = +150°C
IEBO VBE = 5V, IC = 0
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Min Typ Max Unit
80 – – V
– – 0.5 mA
– – 0.5 mA
– – 5.0 mA
– – 2.0 mA
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Pages | Pages 2 | ||
Télécharger | [ NTE244 ] |
No | Description détaillée | Fabricant |
NTE24 | Silicon Complementary Transistors General Purpose Amplifier / Switch | NTE |
NTE240 | Silicon Complementary Transistors | NTE |
NTE2401 | Silicon PNP Transistor RF Stages in FM Front Ends | NTE |
NTE2402 | Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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