|
|
Numéro de référence | NTE193 | ||
Description | Silicon Complementary Transistors | ||
Fabricant | NTE | ||
Logo | |||
1 Page
NTE192 (NPN) & NTE193 (PNP)
NTE192A (NPN) & NTE193A (PNP)
Silicon Complementary Transistors
Audio Power Output
Description:
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These
devices are especially suited for high level linear amplifiers or medium speed switching circuits in
industrial control applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), TL . . . . . . . . +260°C
Note 1. Determined from power limitations due to saturation voltage at this current.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
DC Current Gain
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
VCB = 50V
VCB = 50V, TA = +100°C
VEB = 5V
IB = 3mA, IC = 50mA
IB = 3mA, IC = 50mA
VCE = 4.5V, IC = 2mA
Min Typ Max Unit
– – 0.1 µA
– – 15 µA
– – 0.1 µA
– – 0.30 V
– – 0.85 V
180 – 540
|
|||
Pages | Pages 2 | ||
Télécharger | [ NTE193 ] |
No | Description détaillée | Fabricant |
NTE19 | Silicon Complementary Transistors | NTE |
NTE190 | Silicon NPN Transistor High Voltage Amplifier | NTE |
NTE1900 | Integrated Circuit 3-Terminal Adjustable Positive Voltage Regulator | NTE |
NTE1901 | Integrated Circuit Negative Adjustable Voltage Regulator / -1.2V to -37V / 100mA | NTE |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |