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W25NM60N fiches techniques PDF

STMicroelectronics - STW25NM60N

Numéro de référence W25NM60N
Description STW25NM60N
Fabricant STMicroelectronics 
Logo STMicroelectronics 





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W25NM60N fiche technique
STB25NM60Nx - STF25NM60N
STP25NM60N - STW25NM60N
N-channel 600 V, 0.130 , 21 A, MDmesh™ II Power MOSFET
TO-220, TO-220FP, I2PAK, D2PAK, TO-247
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB25NM60N
t(s)STB25NM60N-1
cSTF25NM60N
uSTP25NM60N
rod )STW25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.160
< 0.160
< 0.160
< 0.160
< 0.160
21 A
21 A
21 A(1)
21 A
21 A
P t(s1. Limited only by maximum temperature allowed
te c100% avalanche tested
le duLow input capacitance and gate charge
so roLow gate input resistance
- Ob te PApplication
) leSwitching applications
ct(s bsoDescription
du - OThis series of devices is realized with the second
ro )generation of MDmesh™ technology. This
P t(srevolutionary MOSFET associates a new vertical
te cstructure to the company’s strip layout to yield one
le uof the world’s lowest on-resistance and gate
dcharge. It is therefore suitable for the most
so rodemanding high efficiency converters
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Ob lete PTable 1. Device summary
soOrder codes
Marking
Ob STB25NM60N
B25NM60N
Package
D²PAK
Packaging
Tape and reel
STB25NM60N-1
B25NM60N
I²PAK
Tube
STF25NM60N
F25NM60N
TO-220FP
Tube
STP25NM60N
P25NM60N
TO-220
Tube
STW25NM60N
W25NM60N
TO-247
Tube
June 2008
Rev 12
1/18
www.st.com
18

PagesPages 18
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