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PDF TIC246N Data sheet ( Hoja de datos )
| Número de pieza | TIC246N | |
| Descripción | Triacs | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC246N
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
800 V
Repetitive peak reverse voltage
800 V
RMS on-state current (full sine wave)TC=70℃
Non-repetitive peak on-state current
16
125
A
A
Operating junction temperature
110 ℃
Storage temperature
-45~125 ℃
Thermal resistance, junction to case
1.9 ℃/W
Thermal resistance, junction to ambient
62.5 ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX UNIT
IDRM Repetitive peak off-state current VD=VDRM, TC=110℃
Ⅰ
2.0 mA
12 50
IGT Gate trigger current
Ⅱ
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Ⅲ
19 50
mA
16 50
Ⅳ 34
IH Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
VGT Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 22.5A; IG= 50mA
40 mA
2V
1.7 V
isc website：www.iscsemi.cn
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| PDF Descargar | [ Datasheet TIC246N.PDF ] | |
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