DataSheetWiki


TIC246M fiches techniques PDF

Inchange Semiconductor - Triacs

Numéro de référence TIC246M
Description Triacs
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





TIC246M fiche technique
INCHANGE Semiconductor
isc Triacs
isc Product Specification
TIC246M
FEATURES
·With TO-220 package
·Sensitive Gate Triacs
·Glass Passivated
·Max IGT of 50 mA (Quadrants 1~3)
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
MIN UNIT
VDRM
VRRM
IT(RMS)
ITSM
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
600 V
Repetitive peak reverse voltage
600 V
RMS on-state current (full sine wave)TC=70
Non-repetitive peak on-state current
16
125
A
A
Operating junction temperature
110
Storage temperature
-45~125
Thermal resistance, junction to case
1.9 /W
Thermal resistance, junction to ambient
62.5 /W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX UNIT
IDRM Repetitive peak off-state current VD=VDRM, TC=110
2.0 mA
12 50
IGT Gate trigger current
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
19 50
mA
16 50
34
IH Holding current
Vsupply = 12 V†,IG= 0 initial ITM=100mA
VGT Gate trigger voltageall quadrant Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
VTM On-state voltage
IT= 22.5A; IG= 50mA
40 mA
2V
1.7 V
isc websitewww.iscsemi.cn

PagesPages 1
Télécharger [ TIC246M ]


Fiche technique recommandé

No Description détaillée Fabricant
TIC246 SILICON TRIACS Power Innovations Limited
Power Innovations Limited
TIC246B (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR Comset Semiconductors
Comset Semiconductors
TIC246C (TIC246x) SILICON BIDIRECTIONAL TRIODE THYRISTOR Comset Semiconductors
Comset Semiconductors
TIC246D Triacs Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche