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Inchange Semiconductor - Thyristors

Numéro de référence TIC116D
Description Thyristors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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TIC116D fiche technique
INCHANGE Semiconductor
isc Thyristors
isc Product Specification
TIC116D
APPLICATIONS
·8A contimunous on-state current
·80A surge-current
·Glass passivated
·Max IGT of 20mA
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
IT(RMS)
ITM
PGM
PG(AV)
Tj
Tstg
Rth(j-c)
Rth(j-a)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
On-state current Tc=80
RMS on-state current Tc=80
Surge peak on-state current
Peak gate power PW300μs
Average gate power
Operating Junction temperature
Storage temperature
Thermal resistance, junction to case
Thermal resistance, junction to ambient
MIN
400
400
5
8
80
5
1
110
-40 ~+125
3
62.5
UNIT
V
V
A
A
A
W
W
/W
/W
ELECTRICAL CHARACTERISTICS (TC=25unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM, Tj=110
IDRM Repetitive peak off-state current VRM=VRRM, Tj=110
VTM On-state voltage
ITM= 8A
IGT Gate-trigger current
VAA=6V; RL=100Ω
VGT Gate-trigger voltage
VAA=6V; RL=100Ω
IH Holding current
VAA=6V; RGK=1kΩ,IT=100mA
2.0 mA
2.0 mA
1.7 V
20 mA
1.5 V
40 mA
isc websitewww.iscsemi.cn

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