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PDF 2N6675 Data sheet ( Hoja de datos )
| Número de pieza | 2N6675 | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N6675 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N6674
2N6675
NPN SILICON
POWER TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6674, 2N6675
types are NPN Silicon Triple Diffused Mesa Power
Transistors designed for high voltage switching
applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJC
2N6674
450
2N6675
650
300 400
7.0
15
20
5.0
175
-65 to +200
1.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEV, VBE=1.5V
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
IEBO
VEB=7.0V
BVCEO IC=200mA (2N6674)
300
BVCEO IC=200mA (2N6675)
400
VCE(SAT) IC=10A, IB=2.0A
VCE(SAT) IC=10A, IB=2.0A, TC=100°C
VCE(SAT) IC=15A, IB=5.0A
VBE(SAT) IC=10A, IB=2.0A
hFE VCE=2.0V, IC=10A
8.0
IS/b VCE=30V, IC=5.9A
1.0
IS/b VCE=100V, IC=250mA
1.0
hfe VCE=10V, IC=1.0A, f=5.0MHz
3.0
ft VCE=10V, IC=1.0A, f=5.0MHz
15
Cob VCB=10V, IE=0, f=100kHz
150
MAX
0.1
1.0
2.0
1.0
2.0
5.0
1.5
20
10
50
500
UNITS
V
V
V
A
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
s
s
MHz
pF
R1 (10-March 2011)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N6675.PDF ] | |
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