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Inchange Semiconductor - Schottky Barrier Rectifier ( Diode )

Numéro de référence MBR1665CT
Description Schottky Barrier Rectifier ( Diode )
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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MBR1665CT fiche technique
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1665CT
FEATURES
·Low Forward Voltage
·170Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
DC Blocking Voltage
65
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 100
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
16
210
TJ Junction Temperature
170
V
A
A
Tstg Storage Temperature Range
-50~170
isc websitewww.iscsemi.cn
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