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Numéro de référence | MBR1665CT | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1665CT
FEATURES
·Low Forward Voltage
·170℃ Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
DC Blocking Voltage
65
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 100℃
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
16
210
TJ Junction Temperature
170
V
A
A
℃
Tstg Storage Temperature Range
-50~170 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ MBR1665CT ] |
No | Description détaillée | Fabricant |
MBR1665CT | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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