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Número de pieza | MBR1630CT | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR1630CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1630CT
FEATURES
·Low Forward Voltage
·150℃ Operating Junction Temperature
·Guaranteed Reverse Avalanche
·Low Power Loss/High Efficiency
·High Surge Capacity
·Low Stored Charge Majority Carrier Conduction
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
IFSM
IRRM
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 100℃
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
Peak Repetitive Reverse Current
(2.0μs, 1.0kHz)
30
21
30
16
125
0.5
V
A
A
A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~175 ℃
isc website:www.iscsemi.cn
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1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR1630CT.PDF ] |
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MBR1630CT | SCHOTTKY BARRIER RECTIFIER | MDD |
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