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Numéro de référence | MBR1065 | ||
Description | Schottky Barrier Rectifier ( Diode ) | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR1065
FEATURES
·Low Forward Voltage
·170℃ Operating Junction Temperature
·Low Power Loss/High Efficiency
·High Surge Capacity
APPLICATIONS
·Power supply- output rectification
·Power management
·Instrumentation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
DC Blocking Voltage
65
IF(AV)
IFSM
Average Rectified Forward Current
(Rated VR) TC= 133℃
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
wave, single phase, 60Hz)
5
150
TJ Junction Temperature
170
V
A
A
℃
Tstg Storage Temperature Range
-50~170 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ MBR1065 ] |
No | Description détaillée | Fabricant |
MBR1060 | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
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