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PDF HVV1214-100 Data sheet ( Hoja de datos )

Número de pieza HVV1214-100
Descripción Power Transistor
Fabricantes HVVi 
Logotipo HVVi Logotipo



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No Preview Available ! HVV1214-100 Hoja de datos, Descripción, Manual

The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
TM L-Band Radar Pulsed Power Transistor
1200-1400 MHz, 200μs Pulse, 10% Duty
For Ground Based Radar Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ Power GAIN
(mA)
(W)
(dB)
η IRL VSWR
(%) (dB)
Class AB
1400
50 100 120 20
45 -8 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 200µs and pulse period = 2ms.
DESCRIPTION
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for
pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFET™ technology
produces over 100W of pulsed output power while offering high gain,high efficiency,and ease of matching
with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1214-100
Demo Kit Part Number: HVV1214-100-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A
12/11/08
1

1 page




HVV1214-100 pdf
The innovative Semiconductor Company!
HVV1214-100 High Voltage, High Ruggedness
TM L-Band Radar Pulsed Power Transistor
HVV1214-100 High Voltage1,2H00ig-1h40R0uMgHgze,d2n00eμsss Pulse, 10% Duty
L-Band Radar Pulsed Power FTorraGnrsoiustnodrBased Radar Applications
1200-1400 MHz, 200µs Pulse, 10% Duty
FoPrAGCrKoAuGnEdDBIaMsEedNSRIaOdNaSr Applications
PACKAGE DIMENSIONS
GATE
DRAIN
SOURCE
Note: Drawing is not actual size.
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published
in this document at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof. Information in this document is believed to
be accurate and reliable. However, HVVi does not give any representations or warranties, either
express or implied, as to the accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. Use of HVVi products as critical components in
life support systems is not authorized. No licenses, either express or implied, are conveyed under
any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are
HtVraVdieSmemarikcsonodfuHcVtoVrsi,SIenmc.i(cHoVndVui)ctroesresr,vInesc.the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, HVVi does not give any representations or warranties, either express or implied, as to
the accuracy or completeness of such information and shall have no liability for the consequences of use
of such information. Use of HVVi products as critical components in life support systems is not
authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property
H10rIVni2gVc3hi.5StsSe,.m5in1iccsotlunSddt.iuSncugtiotaerns1,y0In0pca.tent
rights.
Tel:
The HVISVOi 9n0a0m1e:2a0n0d0 lCoegrotifaiered trademarks
(866) 429-HVVi (4884) or visit www.hvvi.com
of
HVVi
SemiconduEcGt-o0r1s-,DS06A
12/11/08
Phoenix, AZ. 85044
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
5
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
EG-01-DS06A
12/12/08

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