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PDF HVV1012-250 Data sheet ( Hoja de datos )
| Número de pieza | HVV1012-250 | |
| Descripción | Power Transistor | |
| Fabricantes | HVVi | |
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The innovative Semiconductor Company!
HVV1012-250 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor
1025-1150 MHz, 10μs Pulse, 1% Duty Cycle
For Airborne DME, TCAS and IFF Applications
Features
• Silicon MOSFET Technology
• Operation from 24V to 50V
• High Power Gain
• Extreme Ruggedness
• Internal Input and Output Matching
• Excellent Thermal Stability
• All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the
L-Band including Airborne DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY
(MHz)
VDD
(V)
IDQ Power GAIN EFFICIENCY IRL
(mA) (W) (dB)
(%) (dB)
Class AB
1150
50 100 250 19.5 48 20:1
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of
pulse width = 10μs and pulse period = 1ms.
DESCRIPTION
The high power HVV1012-250 device is an enhancement mode RF MOSFET power transistor designed
for pulsed applications in the L-Band from 1025MHz to 1150MHz. The high voltage HVVFET™ technology
produces over 250W of pulsed output power while offering high gain,high efficiency,and ease of matching
with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is
specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION
Device Part Number: HVV1012-250
Demo Kit Part Number: HVV1012-250-EK
Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc.
10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
ISO 9001:2000 Certified
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
© 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS09A
12/11/08
1
1 page  
The innovative Semiconductor Company!
HVV1012-250 High Voltage, High Ruggedness
HL-VBVan1d01A2v-i2o5n0icsHPiguhlsVeTdM olPtaogwee,L1r-0HBT2ai5rgn-ad1hn1As5Rvi0siuotMnogHirgczse,Pd1un0lμseessdPsuPloswe,e1r%TrDanustiystCoyrcle
1025-1150 MHz, 10µs Pulse, 1Fo%r ADirbuotyrnCe DycMleE, TCAS and IFF Applications
For Airborne DME, TCAS and IFF Applications
PACKAGE DIMENSIONS
PACKAGE DIMENSIONS
DRAIN
GATE
SOURCE
Note: Drawing isNnootte:acDtruaawl sinizge.is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published
in this document at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof. Information in this document is believed to
be accurate and reliable. However, HVVi does not give any representations or warranties, either
express or implied, as to the accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. Use of HVVi products as critical components in
life support systems is not authorized. No licenses, either express or implied, are conveyed under
any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are
trademarks of HVVi Semiconductors, Inc.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this
document at any time and without notice. This document supersedes and replaces all information
supplied prior to the publication hereof. Information in this document is believed to be accurate and
reliable. However, HVVi does not give any representations or warranties, either express or implied, as to
the accuracy or completeness of such information and shall have no liability for the consequences of use
of such information. Use of HVVi products as critical components in life support systems is not
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