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PDF HVV1011-035 Data sheet ( Hoja de datos )
| Número de pieza | HVV1011-035 | |
| Descripción | RF transistor | |
| Fabricantes | ASI | |
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DESCRIPTION
The high power HVV1011-035 device is a high
voltage silicon enhancement mode RF transistor
designed for L-band pulsed applications operating
at frequencies of 1030 MHz and 1090 MHz.
PACKAGE
FEATURES
High Power Gain
Excellent Ruggedness
50V Supply Voltage
ABSOLUTE MAXIMUM RATINGS
Symbol
VDSS
VGS
IDSX
PD2
TS
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Storage Temperature
Junction
Temperature
Value
95
-10, 10
2
116
-65 to
+150
200
Unit
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol Parameter
1
JC
Thermal Resistance
Max
1.5
Unit
°C/W
The device resides in the SM200 surface mount
package with a ceramic lid.
RUGGEDNESS
The HVV1011-035 device is capable of
withstanding an output load mismatch
corresponding to a 20:1 VSWR at rated output
power over all phase angles and operating
voltage across the frequency band of operation.
Symbol
LMT1
Parameter
Load
Mismatch
Tolerance
Test Condition
POUT = 35W
F = 1090 MHz
Max
20:1
Units
VSWR
ELECTRICAL CHARACTERISTICS
Symbol
VBR(DSS)
IDSS
IGSS
GP1
IRL1
1
D
PD1
VGS(Q)
VTH
Parameter
Drain-Source Breakdown
Drain Leakage Current
Gate Leakage Current
Power Gain
Input Return Loss
Drain Efficiency
Pulse Droop
Gate Quiescent Voltage
Threshold Voltage
Conditions
VGS=0V,ID=2mA
VGS=0V,VDS=50V
VGS=5V,VDS=0V
POUT=35W, F=1090 MHz
POUT=35W, F=1090 MHz
POUT=35W, F=1090 MHz
POUT=35W, F=1090 MHz
VDD=50V, IDQ=15mA
VDD=5V, ID=300uA
Min Typ
95 102
15
2
20 21.5
-12
46 48
0.3
1.0 1.4
0.7 1.2
1Under Pulse Conditions: Pulse Width = 50 s, Pulse Duty Cycle = 5% at VDD = 50V, IDQ = 15mA
2Rated at TCASE = 25°C
Max
50
10
-8
0.5
1.7
1.7
Units
V
A
A
dB
dB
%
dB
V
V
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 WWW.ADSEMI.COM
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet HVV1011-035.PDF ] | |
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