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Número de pieza | MBR3045 | |
Descripción | Schottky Barrier Rectifier ( Diode ) | |
Fabricantes | Inchange Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR3045 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3045
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Low Power Loss/High Efficiency
·High Current Capability
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
DC Blocking Voltage
45 V
IF(AV)
IFSM
Average Rectified Forward Current
TC= 105℃
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
30
275
A
A
TJ Junction Temperature
170 ℃
Tstg Storage Temperature Range
-55~170 ℃
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%)
SYMBOL
PARAMETER
CONDITIONS
VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25℃
IR Maximum Instantaneous Reverse Current VR= 45V, TC= 25℃
MAX
0.69
20
UNIT
V
μA
isc website:www.iscsemi.cn
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet MBR3045.PDF ] |
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