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PDF MBR3040CT Data sheet ( Hoja de datos )

Número de pieza MBR3040CT
Descripción Schottky Barrier Rectifier ( Diode )
Fabricantes Inchange Semiconductor　
Logotipo Inchange Semiconductor Logotipo



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No Preview Available ! MBR3040CT Hoja de datos, Descripción, Manual

INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3040CT
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
IFSM
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
TC= 100℃
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed
on rated load conditions
40
28
40
30
200
V
A
A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Temperature Range
-55~175 ℃
dv/dt
Voltage Rate of Change (Rated VR)
10,000 V/μs
isc website：www.iscsemi.cn
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