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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence KSD5006
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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KSD5006 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSD5006
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
APPLICATIONS
·Designed for color TV horizontal output applicaitions
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current- Continuous
5
A
ICP Collector Current-Peak
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
16 A
120 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
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