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Numéro de référence | KSC5030 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5030
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
20 A
IB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3A
100 W
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ KSC5030 ] |
No | Description détaillée | Fabricant |
KSC5030 | Silicon NPN Power Transistor | Inchange Semiconductor |
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