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Numéro de référence | IRFZ40FI | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ40FI
FEATURES
·Typical RDS(on) = 0.022
·Avalanche Rugged Technology
·100% Avalanche Tested
·Low Gate Charge
·High Current Capability
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25℃
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
50 V
±20
V
27 A
200 A
45 W
175 ℃
-65~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
3.33
62.5
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
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Pages | Pages 2 | ||
Télécharger | [ IRFZ40FI ] |
No | Description détaillée | Fabricant |
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