DataSheetWiki


IRFZ40FI fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRFZ40FI
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





IRFZ40FI fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ40FI
FEATURES
·Typical RDS(on) = 0.022
·Avalanche Rugged Technology
·100% Avalanche Tested
·Low Gate Charge
·High Current Capability
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
50 V
±20
V
27 A
200 A
45 W
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
3.33
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

PagesPages 2
Télécharger [ IRFZ40FI ]


Fiche technique recommandé

No Description détaillée Fabricant
IRFZ40FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS STMicroelectronics
STMicroelectronics
IRFZ40FI N-Channel MOSFET Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche