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Numéro de référence | IRFS350A | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS350A
FEATURES
·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
400
±30
V
V
ID Drain Current-Continuous
11.5 A
IDM Drain Current-Single Pluse
68 A
PD Total Dissipation @TC=25℃
92 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
1.35
40
UNIT
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRFS350A ] |
No | Description détaillée | Fabricant |
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