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MegaMOSTMFET
N-Channel Enhancement Mode
IRFP 360
VDSS = 400 V
ID25 = 23 A
RDS(on) = 0.20 Ω
Preliminary data
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
ID100
IDM
IAR
EAR
dv/dt
PD
TJ
TJM
Tstg
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1.0
MΩ
Continuous
Transient
TC = 25°C
TC = 100°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS ≤ IDM, di/dt
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
Mounting torque
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
400 V
400 V
±20 V
±30 V
23 A
14 A
92 A
23 A
30 mJ
5 V/ns
300
-55 ... +150
150
-55 ... +150
1.13/10
6
300
W
°C
°C
°C
Nm/lb.in.
g
°C
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
400
2
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 14A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2%
V
4V
±100 nA
25 µA
250 µA
0.20 Ω
TO-247 AD
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
• Fast switching times
• International standard packages
•
Low R HDMOSTM process
DS (on)
• Rugged polysilicon gate cell structure
• High commuting dv/dt rating
Applications
• DC choppers
• Motor Controls
• Switch-mode and resonant-mode
• Uninterruptable power supplies (UPS)
Advantages
• Space savings
• High power density
• Easy to mount with 1 screw (isolated
mounting screw hole)
This data reflects the objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95509A (4/95)
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