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IRF731 fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence IRF731
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF731 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF731
DESCRIPTION
·Drain Current ID=5.5A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
350
±20
V
V
Drain Current-continuous@ TC=255.5 A
Total Dissipation@TC=25
75 W
Max. Operating Junction Temperature -55~150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
/W
/W
isc websitewww.iscsemi.cn
1
PDF pdfFactory Pro
www.fineprint.cn

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