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PDF IRF646 Data sheet ( Hoja de datos )
| Número de pieza | IRF646 | |
| Descripción | N-Channel Mosfet Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF646
·FEATURES
·14A, 275V
·RDS(ON) = 0.280Ω
·Single Pulse Avalanche Energy Rated
·SOA is Power Dissipation Limited
·Nanosecond Switching Speeds
·High Input Impedance
·275V DC Rating-120V AC Line System Operation
·DESCRITION
·designed for applications such as switching regulators,
switching convertors, motor drivers,relay drivers, and
drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
275 V
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous
14 A
Drain Current-Single Plused
56 A
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
125
-55~150
W
℃
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
RθJA
Thermal Resistance,Junction to Case
Junction-to-Ambient
MAX UNIT
1.0 ℃/W
80 ℃/W
isc website：www.iscsemi.cn
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IRF646.PDF ] | |
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