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Numéro de référence | IRF631 | ||
Description | N-Channel Mosfet Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·RDS(on) =0.4Ω
·9A and 150V
·single pulse avalanche energy rated
·SOA is Power- Dissipation Limited
·Linear Transfer Characteristics
·High Input Impedance
isc Product Specification
IRF631
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls ,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
150
±20
V
V
ID Drain Current-Continuous
9A
IDM Drain Current-Single Plused
36 A
PD Total Dissipation @TC=25℃
75 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRF631 ] |
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