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IRF620A fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence IRF620A
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF620A fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF620A
FEATURES
·Low RDS(on) = 0.626Ω(TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±30
V
V
ID Drain Current-Continuous
5A
IDM Drain Current-Single Pluse
18 A
PD Total Dissipation @TC=25
47 W
TJ
Max. Operating Junction Temperature
-55~150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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