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Numéro de référence | IRF620A | ||
Description | N-Channel Mosfet Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF620A
FEATURES
·Low RDS(on) = 0.626Ω(TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±30
V
V
ID Drain Current-Continuous
5A
IDM Drain Current-Single Pluse
18 A
PD Total Dissipation @TC=25℃
47 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 3 | ||
Télécharger | [ IRF620A ] |
No | Description détaillée | Fabricant |
IRF620 | N-Channel Mosfet Transistor | Inchange Semiconductor |
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