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IRF612 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - N-Channel Mosfet Transistor

شماره قطعه IRF612
شرح مفصل N-Channel Mosfet Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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IRF612 شرح
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
isc Product Specification
IRF612
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±20
V
V
ID Drain Current-Continuous
2.6 A
IDM Drain Current-Single Plused
6.5 A
PD Total Dissipation @TC=25
43 W
Tj Max. Operating Junction Temperature -55~175
Tstg Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.9 /W
Rth j-a Thermal Resistance,Junction to Ambient 80 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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