DataSheetWiki


IRF612 fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence IRF612
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





IRF612 fiche technique
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
isc Product Specification
IRF612
·DESCRITION
·Designed for high speed applications,
such as switching power supplies , AC and DC
motor controls,relay and solenoid drivers and other pulse.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±20
V
V
ID Drain Current-Continuous
2.6 A
IDM Drain Current-Single Plused
6.5 A
PD Total Dissipation @TC=25
43 W
Tj Max. Operating Junction Temperature -55~175
Tstg Storage Temperature
-55~175
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
2.9 /W
Rth j-a Thermal Resistance,Junction to Ambient 80 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

PagesPages 2
Télécharger [ IRF612 ]


Fiche technique recommandé

No Description détaillée Fabricant
IRF610 N-Channel Mosfet Transistor Inchange Semiconductor
Inchange Semiconductor
IRF610 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil Corporation
Intersil Corporation
IRF610 N-Channel Power MOSFETs/ 3.5A/ 150-200V Fairchild Semiconductor
Fairchild Semiconductor
IRF610 Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche