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IRF610A fiches techniques PDF

Inchange Semiconductor - N-Channel Mosfet Transistor

Numéro de référence IRF610A
Description N-Channel Mosfet Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF610A fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF610A
FEATURES
·Low RDS(on) = 1.25Ω(TYP)
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Rugged Gate Oxide Technology
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS Gate-Source Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Pluse
PD Total Dissipation @TC=25
TJ Max. Operating Junction Temperature
Tstg Storage Temperature
VALUE UNIT
200
±20
V
V
3.3 A
10 A
38 W
-55~150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
3.68
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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