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Numéro de référence | IRF543 | ||
Description | N-Channel Mosfet Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF543
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
80
±20
V
V
ID Drain Current-Continuous
25 A
IDM Drain Current-Single Plused
100 A
PD Total Dissipation @TC=25℃
150 W
Tj Max. Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRF543 ] |
No | Description détaillée | Fabricant |
IRF540 | Power MOSFET ( Transistor ) | Vishay |
IRF540 | N-Channel Power MOSFETs | Harris |
IRF540 | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRF540 | N-channel TrenchMOS transistor | NXP Semiconductors |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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