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IRFP241R fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRFP241R
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRFP241R fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP241R
FEATURES
·Drain Current ID= 20A@ TC=25
·Drain Source Voltage-
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
200
±20
V
V
ID Drain Current-Continuous
20 A
IDM Drain Current-Single Pluse
80 A
PD Total Dissipation @TC=25
150 W
TJ
Max. Operating Junction Temperature
-55~150
Tstg Storage Temperature
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.83 /W
Rth j-a Thermal Resistance, Junction to Ambient 30 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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