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Numéro de référence | IRFP150FI | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP150FI
FEATURES
·Drain Current –ID= 23A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.055Ω(Max)
·Fast Switching
DESCRIPTION
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±20
V
V
ID Drain Current-Continuous
23 A
IDM Drain Current-Single Pluse
92 A
PD Total Dissipation @TC=25℃
60 W
TJ
Max. Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
0.7 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRFP150FI ] |
No | Description détaillée | Fabricant |
IRFP150FI | N-Channel MOSFET Transistor | Inchange Semiconductor |
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