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Numéro de référence | IRF830FI | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF830FI
DESCRIPTION
·Drain Current –ID= 3.0A@ TC=25℃
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max)
·Fast Switching Speed
·Simple Drive Requirements
APPLICATIONS
·Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
PD
Tj
Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 3 A
Power Dissipation@TC=25℃
35 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
℃/W
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRF830FI ] |
No | Description détaillée | Fabricant |
IRF830FI | N-Channel MOSFET Transistor | Inchange Semiconductor |
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