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IRF830FI fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRF830FI
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF830FI fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF830FI
DESCRIPTION
·Drain Current ID= 3.0A@ TC=25
·Drain Source Voltage-
: VDSS= 500V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.5Ω(Max)
·Fast Switching Speed
·Simple Drive Requirements
APPLICATIONS
·Desinged for high efficiency switch mode power supply.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
PD
Tj
Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=253 A
Power Dissipation@TC=25
35 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
1.67
80
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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