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Numéro de référence | IRF740FI | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF740FI
DESCRIPTION
·Drain Current –ID= 5.5A@ TC=25℃
·Drain Source Voltage-
: VDSS= 400V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 0.55Ω(Max)
·Fast Switching Speed
APPLICATIONS
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
400 V
VGS Gate-Source Voltage
±20
V
ID Drain Current-continuous@ TC=25℃ 5.5 A
Ptot Total Dissipation@TC=25℃
40 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
isc website:www.iscsemi.cn
1
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRF740FI ] |
No | Description détaillée | Fabricant |
IRF740FI | N-Channel MOSFET Transistor | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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