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PDF IRF3710 Data sheet ( Hoja de datos )
| Número de pieza | IRF3710 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF3710 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SEMICONDUCTOR
IRF3710 Series RRooHHSS
DESCRIPTION
Nell High Power Products
N-Channel Power MOSFET
(57A, 100Volts)
The Nell IRF3710 are N-channel enhancement mode
silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand
level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and
reliable device for use in a wide variety of applications
such as switching regulators, convertors, motor drivers
and drivers for high power bipolar switching transistors
requiring high speed and low gate drive power.
These transistors can be operated directly from
integrated circuits.
D
GDS
TO-220AB
(IRF3710A)
D (Drain)
FEATURES
RDS(ON) = 0.023Ω @ VGS = 10V
Ultra low gate charge(130nC max.)
Low reverse transfer capacitance
(CRSS = 72pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
57
100
0.023 @ VGS = 10V
130
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
VGS
ID
IDM
Drain to Source voltage(Note 1)
Drain to Gate voltage
Gate to Source voltage
Continuous Drain Current
Pulsed Drain current (Note 1)
TJ=25°C to 150°C
RGS=20KΩ
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IAR Repetitive avalanche current (Note 1)
EAR Repetitive avalanche energy(Note 1)
EAS Single pulse avalanche energy (Note 2)
IAR=28A, RGS=50Ω, VGS=10V
IAS=28A, L=0.7mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD=50V,L=0.7mH,IAS=28A,RG=25Ω, TJ=175˚C
3.ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
VALUE
100
100
±20
57
40
230
28
20
280
5.8
200
1.3
-55 to 175
-55 to 175
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
IRF3710 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
Single pulse
(Thermal response)
0.01
0.00001
0.0001
0.001
PDM
t1
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
t2
0.01
0.1
Rectangular Pulse Duration , t1 (seconds)
1
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
15V
VDS
L
RG
20V
tP
D.U.T.
lAS
0.01Ω
DRIVER
+
- VDD
A
Vary tp to obtain required IAS
BVDSS
lAS
VDD
www.nellsemi.com
Page 5 of 7
lD(t)
tp
VDS(t)
Time
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRF3710.PDF ] | |
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