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Numéro de référence | IRF3710 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
IRF3710
·FEATURES
·Drain Current –ID=57A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 25mΩ(Max)
·DESCRITION
·Designed for high effciency switch mode power supplies,
Power factor correction and electronic lamp ballasts based
on half bridge.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
100
±20
V
V
ID Drain Current-Continuous
57 A
IDM Drain Current-Single Plused
230 A
PD Total Dissipation @TC=25℃
200 W
Tj Max. Operating Junction Temperature -55~175 ℃
Tstg Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
0.75
62
℃/W
℃/W
isc website:www.iscsemi.cn
1
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ IRF3710 ] |
No | Description détaillée | Fabricant |
IRF3710 | N-Channel Power MOSFET / Transistor | nELL |
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