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IRFW614A fiches techniques PDF

Fairchild Semiconductor - Power MOSFET ( Transistor )

Numéro de référence IRFW614A
Description Power MOSFET ( Transistor )
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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IRFW614A fiche technique
$GYDQFHG 3RZHU 026)(7
IRFW/I614A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 250V
Lower RDS(ON): 1.393(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
BVDSS = 250 V
RDS(on) = 2.0
ID = 2.8 A
D2-PAK I2-PAK
2
1
3
1
2
3
1. Gate 2. Drain 3. Source
Value
250
2.8
1.8
8.5
±30
49
2.8
4
4.8
3.1
40
0.32
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
--
--
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
3.14
40
62.5
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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