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Numéro de référence | IRFSZ14A | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175¡É Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
Lower RDS(ON) : 0.097 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25oC )
Continuous Drain Current (TC=100oC )
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
Repetitive Avalanche Energy
O1
O1
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC )
Linear Derating Factor
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
IRFSZ14A
BVDSS = 60 V
RDS(on) = 0.14 Ω
ID = 8 A
TO-220F
2
3
1.Gate 2. Drain 3. Source
Value
60
8
5.6
40
+_ 20
55
8
1.9
5.5
19
0.13
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ oC
oC
Thermal Resistance
Symbol
R θJC
R θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
7.89
62.5
Units
oC /W
Rev. B
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Pages | Pages 7 | ||
Télécharger | [ IRFSZ14A ] |
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