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Numéro de référence | IRFS510A | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175ΟC Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.289 Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
O2
O1
O1
O3
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8”from case for 5-seconds
IRFS510A
BVDSS = 100 V
RDS(on) = 0.4 Ω
ID = 4.5 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Value
100
4.5
3.2
20
+_ 20
54
4.5
2.1
6.5
21
0.14
- 55 to +175
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ ΟC
ΟC
Thermal Resistance
Symbol
Rθ JC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
©1999 Fairchild Semiconductor Corporation
Typ.
--
--
Max.
6.98
62.5
Units
ΟC /W
Rev. B
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Pages | Pages 7 | ||
Télécharger | [ IRFS510A ] |
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