|
|
Numéro de référence | IRFS254A | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
♦ Low RDS(ON): 0.108Ω (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
IRFS254A
BVDSS = 250 V
RDS(on) = 0.14Ω
ID = 16 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
250
16
10.1
100
±30
640
16
9
4.8
90
0.72
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Thermal Resistance
Symbol
RθJC
RθJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.38
40
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
|
|||
Pages | Pages 7 | ||
Télécharger | [ IRFS254A ] |
No | Description détaillée | Fabricant |
IRFS254 | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFS254A | N-Channel MOSFET Transistor | Inchange Semiconductor |
IRFS254A | Power MOSFET ( Transistor ) | Fairchild Semiconductor |
IRFS254B | 250V N-Channel MOSFET | Fairchild |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |